Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substratesPETITPREZ, E; GONZALEZ-BORRERO, P. P; LUBYSHEV, D. I et al.Microelectronic engineering. 1998, Vol 43-44, pp 59-65, issn 0167-9317Conference Paper

Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperatureBERT, N. A; CHALDYSHEV, V. V; FALEEV, N. N et al.Semiconductor science and technology. 1997, Vol 12, Num 1, pp 51-54, issn 0268-1242Article

Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substratesGONZALEZ-BORRERO, P. P; LUBYSHEV, D. I; MAREGA, E. JR et al.Superlattices and microstructures. 1998, Vol 23, Num 2, pp 365-368, issn 0749-6036Article

Magnetic field tuned transition of aharonov-bohm oscillations from hc/e to hc/2e periodicity in the array of alGaAs/GaAs ringsGUSEV, G. M; BASMAJI, P; LUBYSHEV, D. I et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1231-1234, issn 0038-1101Conference Paper

Quantum transport in δ-doped GaAs layersGUSEV, G. M; KVON, Z. D; LUBYSHEV, D. I et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 4, pp 364-367, issn 0038-5700Article

Radiative recombination of holes in delta-p-doped gallium arsenideGILINSKY, A. M; ZHURAVLEV, K. S; LUBYSHEV, D. I et al.Superlattices and microstructures. 1991, Vol 10, Num 4, pp 399-402, issn 0749-6036Article

Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfacesMAREGA, E. JR; LIBARDI, A. L; LUBYSHEV, D. I et al.Microelectronic engineering. 1998, Vol 43-44, pp 295-299, issn 0167-9317Conference Paper

Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAsGONZALEZ-BORRERO, P. P; MAREGA, E. JR; LUBYSHEV, D. I et al.Journal of crystal growth. 1997, Vol 175-76, pp 765-770, issn 0022-0248, 2Conference Paper

Random magnetic field and weak localization effects in a dimpled 2D electron gasGUSEV, G. M; GENNSER, U; KLEBER, X et al.Superlattices and microstructures. 1995, Vol 18, Num 1, pp 67-73, issn 0749-6036Article

The magnetic-field-tuned impuritiy level in a mesoscopic Al_xGa_1-xAs/GaAs antidot sampleGUSEV, G. M; GENNSER, U; MAUDE, D. K et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 18, pp L265-L272, issn 0953-8984Article

The individual subband densities and mobilities in δ-doped GaAs at different temperaturesPANAEV, I. A; STUDENIKIN, S. A; LUBYSHEV, D. I et al.Semiconductor science and technology. 1993, Vol 8, Num 10, pp 1822-1828, issn 0268-1242Article

Self-organized InGaAs quantum dots grown by molecular beam epitaxy on (100), (711)A/B, (511)A/B, (311)A/B, (211)A/B, and (111)A/B oriented GaAsGONZALEZ-BORRERO, P. P; LUBYSHEV, D. I; MAREGA, E. JR et al.Journal of crystal growth. 1996, Vol 169, Num 3, pp 424-428, issn 0022-0248Article

Absence of delocalised states in a 2D electron gas in a magnetic field below ωcτ=1GUSEV, G. M; GENNSER, U; KLEBER, X et al.Solid state communications. 1996, Vol 100, Num 4, pp 269-273, issn 0038-1098Article

Magnetoresistance oscillations in a dimpled two-dimensional electron gasGUSEV, G. M; GENNSER, U; KLEBER, X et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 855-859, issn 0039-6028Conference Paper

Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlatticesPUSEP, YU. A; DA SILVA, S. W; GALZERANI, J. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 180-183, issn 0921-5107Conference Paper

The effect of the MBE growth rate on the surface phase diagram for GaAs (001)PREOBRAZHENSKII, V. V; LUBYSHEV, D. I; REGINSKI, K et al.Thin solid films. 1995, Vol 267, Num 1-2, pp 51-53, issn 0040-6090Conference Paper

Charge transfer between percolation levels in a system with an artificial, strongly disordered potentialGUSEV, G. M; GENNSER, U; MAUDE, D. K et al.Superlattices and microstructures. 1994, Vol 16, Num 1, pp 97-99, issn 0749-6036Article

Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivityBERNT, N. A; VEINGER, A. I; SEMYAGIN, B. R et al.Physics of the solid state. 1993, Vol 35, Num 10, pp 1289-1297, issn 1063-7834Article

Universal conductance fluctuations of δ-doped GaAs structures of small sizeGUSEV, G. M; KVON, Z. D; LUBYSHEV, D. I et al.Solid state communications. 1989, Vol 70, Num 7, pp 773-775, issn 0038-1098Article

Effet du rapport des flux d'arsenic et de gallium sur la luminescence de l'arséniure de gallium obtenu par épitaxie par jet moléculaireLUBYSHEV, D. I; MIGAL', V. P; PREOBRAZHENSKY, V. V et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 10, pp 1913-1916, issn 0015-3222Article

Magnétoconductivité négative anisotrope des couches quasi bidimensionnelles de GaAs dopées suivant un profil deltaGUSEV, G. M; KVON, Z. D; LUBYSHEV, D. I et al.Fizika tverdogo tela. 1988, Vol 30, Num 10, pp 3148-3150, issn 0367-3294Article